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MOSFETs IPB180P04P4L02ATMA1
Infineon
IPB180P04P4L02ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quint Source |
| Package Width | 9.25 |
| Package Height | 4.4 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Process Technology | OptiMOS P2 |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 119 |
| Typical Rise Time (ns) | 28 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150000 |
| Typical Gate Charge @ 10V (nC) | 220 |
| Typical Gate Charge @ Vgs (nC) | 220@10V |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Output Capacitance (pF) | 4570 |
| Typical Turn-On Delay Time (ns) | 32 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 146 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 180 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 14400@25V |
| Maximum Drain Source Resistance (MOhm) | 2.4@10V |
| Maximum Positive Gate Source Voltage (V) | 5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 720 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62 |
| Description |
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