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IPB60R040C7
IPB60R040C7
MOSFETs IPB60R040C7
Infineon
IPB60R040C7
--
Diodes, Transistors and Thyristors
MOSFETs
IPB60R040C7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyCoolMOS C7
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.2
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ 10V (nC)107
Typical Gate Charge @ Vgs (nC)107@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)18.5
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)81
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)4340@400V
Maximum Drain Source Resistance (MOhm)40@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 50A T/R
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