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IPB70N12S311ATMA1
IPB70N12S311ATMA1
MOSFETs IPB70N12S311ATMA1
Infineon
IPB70N12S311ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusNRND
Channel TypeN
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)1250000
Maximum Drain Source Voltage (V)120
Maximum Gate Threshold Voltage (V)4
Maximum Continuous Drain Current (A)70
Maximum Pulsed Drain Current @ TC=25°C (A)280
Description
OptiMOS® -T Power-Transistor
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