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IPB80N06S4L05ATMA1
IPB80N06S4L05ATMA1
MOSFETs IPB80N06S4L05ATMA1
Infineon
IPB80N06S4L05ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyOptiMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)13
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)107000
Typical Gate Charge @ 10V (nC)83
Typical Gate Charge @ Vgs (nC)83@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)80
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)6290@25V
Maximum Drain Source Resistance (MOhm)4.8@10V
Description
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
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