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IPB80P04P4L-08
IPB80P04P4L-08
MOSFETs IPB80P04P4L-08
Infineon
IPB80P04P4L-08
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ 10V (nC)71
Typical Gate Charge @ Vgs (nC)71@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)42
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)4177@25V
Maximum Drain Source Resistance (mOhm)7.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
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