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IPC028N03L3X1SA1
IPC028N03L3X1SA1
MOSFETs IPC028N03L3X1SA1
Infineon
IPC028N03L3X1SA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.40
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.24
Package Height0.18
Package Length2.26
Product CategoryPower MOSFET
Supplier PackageChip
Maximum IDSS (uA)2
Process TechnologyOptiMOS
Number of Elements per Chip1
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)2.2
Maximum Drain Source Resistance (MOhm)50@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 3-Pin Chip Wafer
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