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MOSFETs IPC302N08N3X1SA1
Infineon
IPC302N08N3X1SA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Wafer |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.57(Max) |
| Package Height | 9.45(Max) |
| Package Length | 10.36(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 3 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Drain Source Resistance (MOhm) | 100@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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