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IPC302N20N3X1SA1
IPC302N20N3X1SA1
MOSFETs IPC302N20N3X1SA1
Infineon
IPC302N20N3X1SA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.40
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height0.25
Package Length6.7
Product CategoryPower MOSFET
Supplier PackageChip
Maximum IDSS (uA)1
Process TechnologyOptiMOS 3
Number of Elements per Chip1
Maximum Drain Source Voltage (V)200
Maximum Gate Threshold Voltage (V)4
Maximum Drain Source Resistance (MOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 3-Pin Chip Wafer
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