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IPD031N03L G
IPD031N03L G
MOSFETs IPD031N03L G
Infineon
IPD031N03L G
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Diodes, Transistors and Thyristors
MOSFETs
IPD031N03L G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.41(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)94000
Typical Gate Charge @ 10V (nC)51
Typical Gate Charge @ Vgs (nC)25@4.5V|51@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)34
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)90
Typical Input Capacitance @ Vds (pF)4000@15V
Maximum Drain Source Resistance (MOhm)3.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
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