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MOSFETs IPD068P03L3 G
Infineon
IPD068P03L3 G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 2 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.41(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Process Technology | OptiMOS P3 |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 100 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 100000 |
| Typical Gate Charge @ 10V (nC) | 68 |
| Typical Gate Charge @ Vgs (nC) | 68@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 84 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 70 |
| Typical Input Capacitance @ Vds (pF) | 5150@15V |
| Maximum Drain Source Resistance (mOhm) | 6.8@10V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 280 |
| Description |
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