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IPD122N10N3GATMA1
IPD122N10N3GATMA1
MOSFETs IPD122N10N3GATMA1
Infineon
IPD122N10N3GATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveUnknown
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS 3
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)94000
Typical Gate Charge @ 10V (nC)26
Typical Gate Charge @ Vgs (nC)26@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)59
Typical Input Capacitance @ Vds (pF)1880@50V
Maximum Drain Source Resistance (MOhm)12.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 59A Automotive 3-Pin(2+Tab) DPAK T/R
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