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IPD20N03L
IPD20N03L
MOSFETs IPD20N03L
Infineon
IPD20N03L
--
Diodes, Transistors and Thyristors
MOSFETs
IPD20N03L.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyOptiMOS
Standard Package NameTO-252
Typical Fall Time (ns)18
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)60000
Typical Gate Charge @ Vgs (nC)8.4@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)530@25V
Maximum Drain Source Resistance (mOhm)20@10V
Description
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK
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