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IPD70R600P7S
IPD70R600P7S
MOSFETs IPD70R600P7S
Infineon
IPD70R600P7S
--
Diodes, Transistors and Thyristors
MOSFETs
IPD70R600P7S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)23
Typical Rise Time (ns)5.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)43100
Typical Gate Charge @ 10V (nC)10.5
Typical Gate Charge @ Vgs (nC)10.5@10V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)700
Typical Turn-Off Delay Time (ns)63
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)8.5
Typical Input Capacitance @ Vds (pF)364@400V
Maximum Drain Source Resistance (MOhm)600@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) DPAK T/R
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