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IPD800N06N G
IPD800N06N G
MOSFETs IPD800N06N G
Infineon
IPD800N06N G
--
Diodes, Transistors and Thyristors
MOSFETs
IPD800N06N G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyOptiMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)27
Typical Rise Time (ns)38
Number of Elements per Chip1
Maximum Power Dissipation (mW)47000
Typical Gate Charge @ 10V (nC)7
Typical Gate Charge @ Vgs (nC)7@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)280@30V
Maximum Drain Source Resistance (MOhm)80@10V
Description
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) DPAK T/R
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