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MOSFETs IPD90R1K2C3ATMA2
Infineon
IPD90R1K2C3ATMA2
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel TypeN
Maximum Power Dissipation (mW)830000
Maximum Drain Source Voltage (V)900
Maximum Gate Threshold Voltage (V)3.5
Maximum Continuous Drain Current (A)5.1
Maximum Pulsed Drain Current @ TC=25°C (A)10
Description
P7 Power MOSFET Transistor
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