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IPDD60R150G7
IPDD60R150G7
MOSFETs IPDD60R150G7
Infineon
IPDD60R150G7
--
Diodes, Transistors and Thyristors
MOSFETs
IPDD60R150G7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count10
AutomotiveNo
PCB changed10
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Drain Quad Source
Package Width15.4
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageHDSOP EP
Typical Fall Time (ns)6
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)95000
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)56
Typical Gate to Drain Charge (nC)8
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)902@400V
Maximum Drain Source Resistance (MOhm)150@10V
Description
Trans MOSFET N-CH 600V 16A 10-Pin HDSOP EP T/R
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