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MOSFETs IPDQ60R010S7AXTMA1
Infineon
IPDQ60R010S7AXTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 22 |
| Automotive | Yes |
| PCB changed | 22 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 15.4 |
| Package Height | 2.3 |
| Package Length | 15 |
| Product Category | Power MOSFET |
| Supplier Package | HDSOP EP |
| Process Technology | CoolMOS |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 5 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 694000 |
| Typical Gate Charge @ Vgs (nC) | 318@12V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 50 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 180 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 11987@300V |
| Maximum Drain Source Resistance (mOhm) | 10@12V |
| Description |
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