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MOSFETs IPG20N06S4L11TMA1
Infineon
IPG20N06S4L11TMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 19 |
| Typical Rise Time (ns) | 3 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 65000 |
| Typical Gate Charge @ 10V (nC) | 41 |
| Typical Gate Charge @ Vgs (nC) | 41@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 58 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 20 |
| Typical Input Capacitance @ Vds (pF) | 3090@25V |
| Maximum Drain Source Resistance (mOhm) | 11.2@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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