Product Attribute | Attribute Value |
Tab | Tab |
PPAP | Unknown |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | Yes |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.4 |
Package Height | 9.25 |
Package Length | 10 |
Product Category | Power MOSFET |
Supplier Package | TO-262 |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS-T2 |
Standard Package Name | I2PAK |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 8 |
Typical Rise Time (ns) | 2 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 71000 |
Typical Gate Charge @ 10V (nC) | 49 |
Typical Gate Charge @ Vgs (nC) | 49@10V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 45 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 45 |
Typical Input Capacitance @ Vds (pF) | 3680@25V |
Maximum Drain Source Resistance (MOhm) | 8.2@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |