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IPL60R385CPAUMA1
IPL60R385CPAUMA1
MOSFETs IPL60R385CPAUMA1
Infineon
IPL60R385CPAUMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width8.1(Max)
Package Height1.1(Max)
Package Length8.1(Max)
Product CategoryPower MOSFET
Supplier PackageVSON
Process TechnologyCoolMOS
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)83000
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)40
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)790@100V
Maximum Drain Source Resistance (mOhm)385@10V
Description
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R
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