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MOSFETs IPL65R190E6AUMA1
Infineon
IPL65R190E6AUMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| PCB changed | 5 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Triple Source |
| Package Width | 8.1(Max) |
| Package Height | 1.1(Max) |
| Package Length | 8.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Thin-PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS E6 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 151000 |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 112 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 20.2 |
| Typical Input Capacitance @ Vds (pF) | 1620@100V |
| Maximum Drain Source Resistance (mOhm) | 190@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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