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IPN80R1K2P7
IPN80R1K2P7
MOSFETs IPN80R1K2P7
Infineon
IPN80R1K2P7
--
Diodes, Transistors and Thyristors
MOSFETs
IPN80R1K2P7.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)20
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)6800
Typical Gate Charge @ 10V (nC)11
Typical Gate Charge @ Vgs (nC)11@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Typical Input Capacitance @ Vds (pF)300@500V
Maximum Drain Source Resistance (MOhm)1200@10V
Description
Trans MOSFET N-CH 800V 4.5A T/R
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