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IPN80R4K5P7ATMA1
IPN80R4K5P7ATMA1
MOSFETs IPN80R4K5P7ATMA1
Infineon
IPN80R4K5P7ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8542.39.00.01
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)80
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)6000
Typical Gate Charge @ 10V (nC)4
Typical Gate Charge @ Vgs (nC)4@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)3
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)800
Typical Gate Plateau Voltage (V)4.5
Typical Turn-Off Delay Time (ns)60
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)1.8
Maximum Gate Threshold Voltage (V)3.5
Minimum Gate Threshold Voltage (V)2.5
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)0.6
Typical Reverse Recovery Time (ns)600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)80@500V
Typical Reverse Recovery Charge (nC)1600
Maximum Drain Source Resistance (MOhm)4500@10V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)2.6
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)160
Description
Trans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) SOT-223 T/R
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