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IPN80R900P7
IPN80R900P7
MOSFETs IPN80R900P7
Infineon
IPN80R900P7
--
Diodes, Transistors and Thyristors
MOSFETs
IPN80R900P7.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel TypeN
Package Width3.5
Package Height1.6
Package Length6.5
Supplier PackageSOT-223
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)7000
Maximum Drain Source Voltage (V)800
Typical Gate to Drain Charge (nC)6
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Maximum Pulsed Drain Current @ TC=25°C (A)14
Description
P7 Power Transistor
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