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MOSFETs IPP019N08NF2SAKMA1
Infineon
IPP019N08NF2SAKMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyStrongIRFET
Typical Fall Time (ns)26.4
Typical Rise Time (ns)61.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)124
Typical Gate Charge @ Vgs (nC)124@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)20.7
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)50
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32
Typical Input Capacitance @ Vds (pF)8700@40V
Maximum Drain Source Resistance (MOhm)1.9@10V
Description
Trans MOSFET N-CH 80V 32A Tube
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