Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | StrongIRFET |
Typical Fall Time (ns) | 26.4 |
Typical Rise Time (ns) | 61.8 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3800 |
Typical Gate Charge @ 10V (nC) | 124 |
Typical Gate Charge @ Vgs (nC) | 124@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 20.7 |
Maximum Drain Source Voltage (V) | 80 |
Typical Turn-Off Delay Time (ns) | 50 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 32 |
Typical Input Capacitance @ Vds (pF) | 8700@40V |
Maximum Drain Source Resistance (MOhm) | 1.9@10V |
Description |