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IPP03N03LB G
IPP03N03LB G
MOSFETs IPP03N03LB G
Infineon
IPP03N03LB G
--
Diodes, Transistors and Thyristors
MOSFETs
IPP03N03LB G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height9.25
Package Length10
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyOptiMOS
Standard Package NameTO-220
Typical Fall Time (ns)7.4
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ Vgs (nC)44@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)49
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)5732@15V
Maximum Drain Source Resistance (MOhm)3.1@10V
Description
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB
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