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MOSFETs IPP086N10N3 G
Infineon
IPP086N10N3 G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.4 |
| Package Height | 9.25 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 3 |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 42 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Gate Charge @ Vgs (nC) | 42@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Typical Input Capacitance @ Vds (pF) | 2990@50V |
| Maximum Drain Source Resistance (mOhm) | 8.6@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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