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IPP60R099P7XKSA1
IPP60R099P7XKSA1
MOSFETs IPP60R099P7XKSA1
Infineon
IPP60R099P7XKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8542.39.00.01
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
Package Width4.4
Package Height9.25
Package Length10
Supplier PackageTO-220
Maximum Power Dissipation (mW)117000
Maximum Drain Source Voltage (V)600
Typical Gate to Drain Charge (nC)14
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Maximum Pulsed Drain Current @ TC=25°C (A)100
Description
600V CoolMOS P7 Power Transistor
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