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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPP60R160P7XKSA1
IPP60R160P7XKSA1
MOSFETs IPP60R160P7XKSA1
Infineon
IPP60R160P7XKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPP60R160P7XKSA1.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)8
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)81000
Typical Gate Charge @ 10V (nC)31
Typical Gate Charge @ Vgs (nC)31@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)100
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)1317@400V
Maximum Drain Source Resistance (MOhm)160@10V
Maximum Pulsed Drain Current @ TC=25°C (A)66
Description
Trans MOSFET N-CH 600V 20A Tube
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