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IPP65R110CFD
IPP65R110CFD
MOSFETs IPP65R110CFD
Infineon
IPP65R110CFD
--
Diodes, Transistors and Thyristors
MOSFETs
IPP65R110CFD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologyCoolMOS
Standard Package NameTO-220
Typical Fall Time (ns)6
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)277800
Typical Gate Charge @ 10V (nC)118
Typical Gate Charge @ Vgs (nC)118@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)68
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31.2
Typical Input Capacitance @ Vds (pF)3240@100V
Maximum Drain Source Resistance (MOhm)110@10V
Description
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
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