Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.4 |
Package Height | 9.25 |
Package Length | 10 |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS 2 |
Typical Fall Time (ns) | 3 |
Typical Rise Time (ns) | 4 |
Typical Switch Charge (nC) | 3 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 31000 |
Typical Gate Charge @ 10V (nC) | 8 |
Typical Gate Charge @ Vgs (nC) | 8@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 76 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 13 |
Typical Gate to Drain Charge (nC) | 2 |
Maximum Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 3 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 13 |
Typical Input Capacitance @ Vds (pF) | 538@50V |
Typical Reverse Recovery Charge (nC) | 114 |
Maximum Drain Source Resistance (mOhm) | 80@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |