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MOSFETs IPP90R1K2C3XKSA2
Infineon
IPP90R1K2C3XKSA2
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Number of Elements per Chip1
Maximum Power Dissipation (mW)830000
Maximum Drain Source Voltage (V)900
Maximum Gate Threshold Voltage (V)3.5
Maximum Continuous Drain Current (A)5.1
Maximum Drain Source Resistance (mOhm)1200@10V
Maximum Pulsed Drain Current @ TC=25°C (A)10
Description
Power Mosfet
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