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MOSFETs IPSA70R1K2P7S
Infineon
IPSA70R1K2P7S
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.3 |
| Package Height | 6.1 |
| Package Length | 6.6 |
| Product Category | Power MOSFET |
| Supplier Package | TO-251 |
| Typical Fall Time (ns) | 48 |
| Typical Rise Time (ns) | 4.8 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 25000 |
| Typical Gate Charge @ 10V (nC) | 4.8 |
| Typical Gate Charge @ Vgs (nC) | 4.8@10V |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 700 |
| Typical Turn-Off Delay Time (ns) | 60 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 4.5 |
| Typical Input Capacitance @ Vds (pF) | 174@400V |
| Maximum Drain Source Resistance (MOhm) | 1200@10V |
| Description |
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