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IPT004N03LATMA1
IPT004N03LATMA1
MOSFETs IPT004N03LATMA1
Infineon
IPT004N03LATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveUnknown
Lead ShapeFlat
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width10.38
Package Height2.3
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageHSOF
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameHSOF
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)37
Typical Rise Time (ns)17
Typical Switch Charge (nC)38
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)5.4
Minimum Gate Resistance (Ohm)1.4
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ Vgs (nC)122@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)5400
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.2
Typical Turn-Off Delay Time (ns)149
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.83
Typical Gate to Drain Charge (nC)28
Maximum Gate Threshold Voltage (V)2.2
Minimum Gate Threshold Voltage (V)0.7
Typical Gate to Source Charge (nC)40
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)72
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)18000@15V
Typical Reverse Recovery Charge (nC)100
Maximum Drain Source Resistance (MOhm)0.4@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1200
Maximum Power Dissipation on PCB @ TC=25°C (W)3.8
Typical Reverse Transfer Capacitance @ Vds (pF)590@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)72
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62
Description
Trans MOSFET N-CH 30V 72A Automotive 9-Pin(8+Tab) HSOF T/R
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