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IPT012N08N5
IPT012N08N5
MOSFETs IPT012N08N5
Infineon
IPT012N08N5
--
Diodes, Transistors and Thyristors
MOSFETs
IPT012N08N5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveUnknown
Lead ShapeFlat
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width10.38
Package Height2.3
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageHSOF
Maximum IDSS (uA)1
Process TechnologyOptiMOS 5
Standard Package NameHSOF
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)30
Typical Rise Time (ns)31
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)178
Typical Gate Charge @ Vgs (nC)178@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)82
Maximum Gate Threshold Voltage (V)3.8
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)300
Typical Input Capacitance @ Vds (pF)13000@40V
Maximum Drain Source Resistance (MOhm)1.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R
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