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IPT029N08N5ATMA1
IPT029N08N5ATMA1
MOSFETs IPT029N08N5ATMA1
Infineon
IPT029N08N5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveUnknown
PCB changed8
Part StatusActive
Channel TypeN
Package Width10.38
Package Height2.3
Package Length9.9
Supplier PackageHSOF
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)167000
Maximum Drain Source Voltage (V)80
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)3.8
Maximum Pulsed Drain Current @ TC=25°C (A)676
Description
OptiMOS 5Power-Transistor,80V
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