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MOSFETs IPTC012N08NM5ATMA1
Infineon
IPTC012N08NM5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| PCB changed | 16 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Octal Drain Seven Source |
| Package Width | 10.1 |
| Package Height | 2.3 |
| Package Length | 9.9 |
| Product Category | Power MOSFET |
| Supplier Package | HDSOP |
| Process Technology | OptiMOS 5 |
| Typical Fall Time (ns) | 55 |
| Typical Rise Time (ns) | 19 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3800 |
| Typical Gate Charge @ 10V (nC) | 175 |
| Typical Gate Charge @ Vgs (nC) | 175@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 31 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 69 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 40 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 12000@40V |
| Maximum Drain Source Resistance (mOhm) | 1.2@10V |
| Description |
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