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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPTG007N06NM5ATMA1
IPTG007N06NM5ATMA1
MOSFETs IPTG007N06NM5ATMA1
Infineon
IPTG007N06NM5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPTG007N06NM5ATMA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count9
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width8.55
Package Height2.3
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageHSOG
Process TechnologyOptiMOS
Typical Fall Time (ns)22
Typical Rise Time (ns)18
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)216
Typical Gate Charge @ Vgs (nC)216@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)38
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)76
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)53
Typical Input Capacitance @ Vds (pF)16000@30V
Maximum Drain Source Resistance (MOhm)0.75@10V
Description
OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance
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