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MOSFETs IPTG210N25NM3FDATMA1
Infineon
IPTG210N25NM3FDATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Seven Source |
| Package Width | 8.55 |
| Package Height | 2.3 |
| Package Length | 9.75 |
| Product Category | Power MOSFET |
| Supplier Package | HSOG |
| Process Technology | OptiMOS 3 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 13 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3800 |
| Typical Gate Charge @ 10V (nC) | 65 |
| Typical Gate Charge @ Vgs (nC) | 65@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.7 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 5300@125V |
| Maximum Drain Source Resistance (MOhm) | 21@10V |
| Description |
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