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IPU50R1K4CEAKMA1
IPU50R1K4CEAKMA1
MOSFETs IPU50R1K4CEAKMA1
Infineon
IPU50R1K4CEAKMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.41(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-251
Maximum IDSS (uA)1
Process TechnologyCoolMOS CE
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)30
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)42000
Typical Gate Charge @ 10V (nC)8.2
Typical Gate Charge @ Vgs (nC)8.2@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)6.5
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)23
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.8
Typical Input Capacitance @ Vds (pF)178@100V
Maximum Drain Source Resistance (MOhm)1400@13V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 4.8A 3-Pin(3+Tab) TO-251 Tube
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