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MOSFETs IPW60R125P6XKSA1
Infineon
IPW60R125P6XKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.21(Max) |
| Package Height | 21.1(Max) |
| Package Length | 16.3(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 2 |
| Process Technology | CoolMOS P6 |
| Standard Package Name | TO-247 |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 9 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 219000 |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 56@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Output Capacitance (pF) | 110 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Gate Plateau Voltage (V) | 6.1 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate to Drain Charge (nC) | 20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 3.5 |
| Typical Gate Threshold Voltage (V) | 4 |
| Typical Gate to Source Charge (nC) | 16 |
| Typical Reverse Recovery Time (ns) | 385 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2660@100V |
| Typical Reverse Recovery Charge (nC) | 7000 |
| Maximum Drain Source Resistance (MOhm) | 125@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 87 |
| Description |
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