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IPW65R110CFD
IPW65R110CFD
MOSFETs IPW65R110CFD
Infineon
IPW65R110CFD
--
Diodes, Transistors and Thyristors
MOSFETs
IPW65R110CFD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height21.1(Max)
Package Length16.13(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Process TechnologyCoolMOS
Standard Package NameTO-247
Typical Fall Time (ns)6
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)277800
Typical Gate Charge @ 10V (nC)118
Typical Gate Charge @ Vgs (nC)118@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)700
Typical Turn-Off Delay Time (ns)68
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31.2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)3240@100V
Maximum Drain Source Resistance (mOhm)110@10V
Description
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 Tube
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