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IPW90R800C3
IPW90R800C3
MOSFETs IPW90R800C3
Infineon
IPW90R800C3
--
Diodes, Transistors and Thyristors
MOSFETs
IPW90R800C3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.16(Max)
Package Height21.1(Max)
Package Length16.03(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Standard Package NameTO-247
Typical Fall Time (ns)32
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)104000
Typical Gate Charge @ 10V (nC)42
Typical Gate Charge @ Vgs (nC)42@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)70
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)400
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.9
Typical Input Capacitance @ Vds (pF)1100@100V
Maximum Drain Source Resistance (mOhm)800@10V
Maximum Pulsed Drain Current @ TC=25°C (A)15
Description
Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-247 Tube
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