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IPZ65R045C7
IPZ65R045C7
MOSFETs IPZ65R045C7
Infineon
IPZ65R045C7
--
Diodes, Transistors and Thyristors
MOSFETs
IPZ65R045C7.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed4
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)2
Process TechnologyCoolMOS
Standard Package NameTO-247
Typical Fall Time (ns)7
Typical Rise Time (ns)14
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ 10V (nC)93
Typical Gate Charge @ Vgs (nC)93@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)70
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)700
Typical Gate Plateau Voltage (V)5.4
Typical Turn-Off Delay Time (ns)82
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)30
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)3
Typical Gate Threshold Voltage (V)3.5
Typical Gate to Source Charge (nC)23
Typical Reverse Recovery Time (ns)725
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)46
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)4340@400V
Typical Reverse Recovery Charge (nC)13000
Maximum Drain Source Resistance (mOhm)45@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)212
Description
Trans MOSFET N-CH 700V 46A Automotive 4-Pin(4+Tab) TO-247 Tube
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