Product Attribute | Attribute Value |
HTS | 8542330001 |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Source |
Product Category | Power MOSFET |
Typical Fall Time (ns) | 4 |
Typical Rise Time (ns) | 7 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 201000 |
Typical Gate Charge @ 10V (nC) | 90 |
Typical Gate Charge @ Vgs (nC) | 90@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 27 |
Maximum Drain Source Voltage (V) | 600 |
Typical Turn-Off Delay Time (ns) | 88 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 61 |
Typical Input Capacitance @ Vds (pF) | 3891@400V |
Maximum Drain Source Resistance (MOhm) | 45@10V |
Description |