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MOSFETs IRC530-007
Vishay
IRC530-007
--
Diodes, Transistors and Thyristors
MOSFETs
IRC530-007.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
MountingThrough Hole
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)25
Process TechnologyHEXFET
Typical Fall Time (ns)25
Typical Rise Time (ns)42
Number of Elements per Chip1
Maximum Power Dissipation (mW)88000
Typical Gate Charge @ 10V (nC)26
Typical Gate Charge @ Vgs (nC)26(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)700@25V
Maximum Drain Source Resistance (MOhm)160@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 14A 5-Pin(5+Tab) TO-220
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