Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 5 |
Automotive | No |
PCB changed | 5 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 25 |
Process Technology | HEXFET |
Typical Fall Time (ns) | 25 |
Typical Rise Time (ns) | 42 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 88000 |
Typical Gate Charge @ 10V (nC) | 26 |
Typical Gate Charge @ Vgs (nC) | 26(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 9.5 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 22 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 14 |
Typical Input Capacitance @ Vds (pF) | 700@25V |
Maximum Drain Source Resistance (MOhm) | 160@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |