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IRF100P218XKMA1
IRF100P218XKMA1
MOSFETs IRF100P218XKMA1
Infineon
IRF100P218XKMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)120
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)556000
Typical Gate Charge @ 10V (nC)370
Typical Gate Charge @ Vgs (nC)370@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)50
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)170
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)462
Typical Input Capacitance @ Vds (pF)25000@50V
Maximum Drain Source Resistance (mOhm)1.28@10V
Description
Trans MOSFET N-CH Si 100V 462A Tube
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