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IRF100S201
IRF100S201
MOSFETs IRF100S201
Infineon
IRF100S201
--
Diodes, Transistors and Thyristors
MOSFETs
IRF100S201.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)100
Typical Rise Time (ns)97
Number of Elements per Chip1
Maximum Power Dissipation (mW)441000
Typical Gate Charge @ 10V (nC)170
Typical Gate Charge @ Vgs (nC)170@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)660
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4.4
Typical Turn-Off Delay Time (ns)110
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)45
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)46
Typical Reverse Recovery Time (ns)47
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)192
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)9500@50V
Typical Reverse Recovery Charge (nC)90
Maximum Drain Source Resistance (mOhm)4.2@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)690
Typical Reverse Transfer Capacitance @ Vds (pF)310@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R
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