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IRF1010NSTRRPBF
IRF1010NSTRRPBF
MOSFETs IRF1010NSTRRPBF
Infineon
IRF1010NSTRRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)48
Typical Rise Time (ns)76
Number of Elements per Chip1
Maximum Power Dissipation (mW)180000
Typical Gate Charge @ 10V (nC)120(Max)
Typical Gate Charge @ Vgs (nC)120(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)690
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)55
Typical Gate Plateau Voltage (V)3.8
Typical Turn-Off Delay Time (ns)39
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)41(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)19(Max)
Typical Reverse Recovery Time (ns)69
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)85
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3210@25V
Typical Reverse Recovery Charge (nC)220
Maximum Drain Source Resistance (mOhm)11@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)290
Typical Reverse Transfer Capacitance @ Vds (pF)140@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R
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