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IRF135SA204
IRF135SA204
MOSFETs IRF135SA204
Infineon
IRF135SA204
--
Diodes, Transistors and Thyristors
MOSFETs
IRF135SA204.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.54(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)56
Typical Rise Time (ns)56
Number of Elements per Chip1
Maximum Power Dissipation (mW)500000
Typical Gate Charge @ 10V (nC)210
Typical Gate Charge @ Vgs (nC)210@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)135
Typical Turn-Off Delay Time (ns)140
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)160
Typical Input Capacitance @ Vds (pF)11690@50V
Maximum Drain Source Resistance (MOhm)5.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 135V 160A 7-Pin(6+Tab) D2PAK T/R
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